K4A8G165WC-BITD

Produktübersicht

IC Picture

Bilder dienen nur der Illustration

Hersteller-Nummer K4A8G165WC-BITD
Hersteller SAMSUNG
Produktkategorie DDR4 SDRAM
IC-Code 512MX16 DDR4
Andere Bezeichnungen K4A8G165WC-BITD000
K4A8G165WC-BITD0CV
K4A8G165WC-BITDTCV

Produktbeschreibung

Gehäuse FBGA-96
Verpackung
RoHS RoHS
Spannungsversorgung 1.2 V
Betriebstemperatur -40 C~+85 C
Geschwindigkeit 2666 MBPS
Standard Stückzahl
Abmessungen Karton
Number Of Words 512M
Bit Organization x16
Density 8Gb
Internal Banks 16 Banks
Generation 4th Generation
Power Normal Power

Verfügbare Angebote

Teilenummer Menge Datecode
K4A8G165WC-BITD 0 Anfrage senden
K4A8G165WC-BITD0CV 32.027 Anfrage senden
K4A8G165WC-BITD0CV 30.000 Anfrage senden
K4A8G165WC-BITD 20.160 Anfrage senden
K4A8G165WC-BITD 22.400 Anfrage senden
K4A8G165WC-BITD0CV 50.000 23+ Anfrage senden
K4A8G165WC-BITD0CV 38.400 23+ Anfrage senden
K4A8G165WC-BITD 11.200 22+ Anfrage senden
K4A8G165WC-BITDTCV 36.000 22+ Anfrage senden
K4A8G165WC-BITD 2.000 Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
IS43QR16512A-075VBLA1 FBGA-96 1.2 V 2666 MBPS -40 C~+85 C
IS43QR16512A-075VBLI FBGA-96 1.2 V 2666 MBPS -40 C~+85 C
K4A8G165WB-BITD FBGA-96 1.2 V 2666 MBPS -40 C~+85 C
K4A8G165WB-BITDTCV FBGA-96 1.2 V 2666 MBPS -40 C~+85 C
K4A8G165WC-BITD U FBGA-96 1.2 V 2666 MBPS -40 C~+85 C
K4A8G165WC-BITDOCV FBGA-96 1.2 V 2666 MBPS -40 C~+85 C
K4A8G165WC-BITDTCT FBGA-96 1.2 V 2666 MBPS -40 C~+85 C
K4A8G165WC-BIWE FBGA-96 1.2 V 2666 MBPS -40 C~+85 C
K4A8G165WC-BIWE0CV FBGA-96 1.2 V 2666 MBPS -40 C~+85 C
K4A8G165WC-BIWETCT FBGA-96 1.2 V 2666 MBPS -40 C~+85 C