K4B1G0846E-HCH9
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4B1G0846E-HCH9 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR3 SDRAM |
| IC-Code | 128MX8 DDR3 |
| Andere Bezeichnungen | K4B1G0846E-HCH90 |
| K4B1G0846E-HCH9000 |
Produktbeschreibung
| Gehäuse | FBGA-78 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.35V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 1333 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 128M |
| Bit Organization | x8 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Generation | 6th Generation |
| Power | Normal Power |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4B1G0846E-HCH9 | 4.000 | Anfrage senden | |
| K4B1G0846E-HCH9 | 5.120 | 201010+ | Anfrage senden |
| K4B1G0846E-HCH9 | 108 | Anfrage senden | |
| K4B1G0846E-HCH9 | 2.560 | 11+ | Anfrage senden |
| K4B1G0846E-HCH9 | 15.514 | Anfrage senden | |
| K4B1G0846E-HCH9 | 472 | 2010+ | Anfrage senden |
| K4B1G0846E-HCH9 | 2.043 | Anfrage senden | |
| K4B1G0846E-HCH9 | 3.993 | 11+ | Anfrage senden |
| K4B1G0846E-HCH9 | 10.000 | 2010 | Anfrage senden |
| K4B1G0846E-HCH9 | 10.000 | 2010+ | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| K4B1G0846G-BCH0 | FBGA-78 | 1.35V | 1333 MBPS | 0 C~+85 C |
| K4B1G0846G-BCH9 | FBGA-78 | 1.35V | 1333 MBPS | 0 C~+85 C |
| K4B1G0846G-BCH9 4240EA | FBGA-78 | 1.35V | 1333 MBPS | 0 C~+85 C |
| K4B1G0846G-BCH9 SAMSUNG | FBGA-78 | 1.35V | 1333 MBPS | 0 C~+85 C |
| K4B1G0846G-BCH9 USD 1.33 | FBGA-78 | 1.35V | 1333 MBPS | 0 C~+85 C |
| K4B1G0846G-BCH90 | FBGA-78 | 1.35V | 1333 MBPS | 0 C~+85 C |
| K4B1G0846G-BCH9000 | FBGA-78 | 1.35V | 1333 MBPS | 0 C~+85 C |
| K4B1G0846G-BCH90DT | FBGA-78 | 1.35V | 1333 MBPS | 0 C~+85 C |
| K4B1G0846G-BCH90S3 | FBGA-78 | 1.35V | 1333 MBPS | 0 C~+85 C |
| K4B1G0846G-BCH91G | FBGA-78 | 1.35V | 1333 MBPS | 0 C~+85 C |