K4B4G0846B-HCK
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4B4G0846B-HCK |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR3 SDRAM |
| IC-Code | 512MX8 DDR3 |
| Andere Bezeichnungen | K4B4G0846B-HCK0 |
| K4B4G0846B-HCK0000 | |
| K4B4G0846B-HCK0TCV |
Produktbeschreibung
| Gehäuse | FBGA-78 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.5 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 1866 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 512M |
| Bit Organization | x8 |
| Density | 4G |
| Internal Banks | 8 Banks |
| Generation | 3rd Generation |
| Power | Normal Power |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4B4G0846B-HCK0 | 113 | 11+ | Anfrage senden |
| K4B4G0846B-HCK0 | 2.000 | 13+ | Anfrage senden |
| K4B4G0846B-HCK0000 | 1.387 | 14+ | Anfrage senden |
| K4B4G0846B-HCK0 | 1.280 | Anfrage senden | |
| K4B4G0846B-HCK0000 | 1.409 | 14+ | Anfrage senden |
| K4B4G0846B-HCK0 | 10.240 | Anfrage senden | |
| K4B4G0846B-HCK0 | 505 | Anfrage senden | |
| K4B4G0846B-HCK0 | 100 | 12 | Anfrage senden |
| K4B4G0846B-HCK0 | 1.280 | 14+ | Anfrage senden |
| K4B4G0846B-HCK0 | 500 | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| IS43TR85120ECL-107NB | BGA-78 | 1.35V/1.5V | 1866 MBPS | 0 C~+85 C |
| IS43TR85120ECL-107NBL | BGA-78 | 1.35V/1.5V | 1866 MBPS | 0 C~+85 C |
| IS43TR85120ECL-107NBLC | BGA-78 | 1.35V/1.5V | 1866 MBPS | 0 C~+85 C |
| IS46TR85120AL | BGA-78 | 1.35V/1.5V | 1866 MBPS | 0 C~+85 C |
| K4B4G0846B-HCMA | FBGA-78 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| K4B4G0846D-BCK | FBGA-78 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| K4B4G0846D-BCMA | FBGA-78 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| K4B4G0846D-BCMA000 | FBGA-78 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| K4B4G0846D-BCMA0DT | FBGA-78 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| K4B4G0846D-BCMA0T | FBGA-78 | 1.5 V | 1866 MBPS | 0 C~+85 C |