Bilder dienen nur der Illustration
| Hersteller-Nummer | K4B4G0846D-BCK |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR3 SDRAM |
| IC-Code | 512MX8 DDR3 |
| Andere Bezeichnungen | K4B4G0846D-BCK0 |
| K4B4G0846D-BCK0000 | |
| K4B4G0846D-BCK00000 | |
| K4B4G0846D-BCK00CV | |
| K4B4G0846D-BCK0T00 | |
| K4B4G0846D-BCK0TCV |
| Gehäuse | FBGA-78 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.5 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 1866 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 512M |
| Bit Organization | x8 |
| Density | 4G |
| Internal Banks | 8 Banks |
| Power | Normal Power |
| Generation | 5th Generation |
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4B4G0846D-BCK0 | 1.385 | 17+ | Anfrage senden |
| K4B4G0846D-BCK0 | 6.721 | Anfrage senden | |
| K4B4G0846D-BCK0TCV | 0 | Anfrage senden | |
| K4B4G0846D-BCK0 | 500 | 14+ | Anfrage senden |
| K4B4G0846D-BCK0 | 640 | 16+ | Anfrage senden |
| K4B4G0846D-BCK0 | 5.500 | Anfrage senden | |
| K4B4G0846D-BCK0 | 12.000 | 17+ | Anfrage senden |
| K4B4G0846D-BCK0 | 2.000 | Anfrage senden | |
| K4B4G0846D-BCK0000 | 13.430 | 18+ | Anfrage senden |
| K4B4G0846D-BCK0 | 6.400 | 18+ | Anfrage senden |
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| H5TQ4G83BFR-RDA | FBGA-78 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G83BFR-RDCA | FBGA-78 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G83CFR-RDA | FBGA-78 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G83EFR-RDA | FBGA-78 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| IS43TR85120A-107MBL | BGA-78 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| IS43TR85120AL | BGA-78 | 1.35V/1.5V | 1866 MBPS | 0 C~+85 C |
| IS43TR85120AL-107MB | BGA-78 | 1.35V/1.5V | 1866 MBPS | 0 C~+85 C |
| IS43TR85120AL-107MBL | BGA-78 | 1.35V/1.5V | 1866 MBPS | 0 C~+85 C |
| IS43TR85120AL-107MBL-TR | BGA-78 | 1.35V/1.5V | 1866 MBPS | 0 C~+85 C |
| IS43TR85120AL-107MBLC | BGA-78 | 1.35V/1.5V | 1866 MBPS | 0 C~+85 C |