K4B4G0846E-BMM0
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4B4G0846E-BMM0 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR3L SDRAM |
| IC-Code | 512MX8 DDR3L |
Produktbeschreibung
| Gehäuse | FBGA-78 |
| Verpackung | TRAY |
| RoHS | RoHS |
| Spannungsversorgung | 1.35V |
| Betriebstemperatur | -40 C~+95 C |
| Geschwindigkeit | 1866 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 512M |
| Bit Organization | x8 |
| Density | 4G |
| Internal Banks | 8 Banks |
| Power | Low VDD(1.35V) |
| Generation | 6th Generation |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| H5TC4G83CFR-RDI | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
| H5TC4G83EFR-RDI | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
| K4B4G0846E-BMMA | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
| K4B4G0846E-BMMA000 | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
| K4B4G0846E-BMMA0CV | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
| K4B4G0846E-BMMATCT | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
| K4B4G0846E-BMMATCV | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
| MT41K512M8DA-107 AIT ES:P | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
| MT41K512M8DA-107 AIT:P | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
| MT41K512M8DA-107 AIT:P TR | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |