Bilder dienen nur der Illustration
Hersteller-Nummer | K4B4G1646E-BYK0/BCMA |
Hersteller | SAMSUNG |
Produktkategorie | DDR3L SDRAM |
IC-Code | 256MX16 DDR3L |
Gehäuse | FBGA-96 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 1.35V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 1866 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 256M |
Bit Organization | x16 |
Density | 4G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Low VDD(1.35V) |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
MT41K256M16LY-107:P | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16RE-107 ES:D | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16RE-107:D | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16TE-107:P | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16TW-107 | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16TW-107 : P TR FBGA- | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16TW-107 AT:P | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16TW-107 ES:P | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16TW-107 ES:R | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16TW-107 IT:P TRAY | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |