圖片僅供參考
製造商IC編號 | K4B4G1646E-BYK0/BCMA |
廠牌 | SAMSUNG/三星 |
IC 類別 | DDR3L SDRAM |
IC代碼 | 256MX16 DDR3L |
脚位/封装 | FBGA-96 |
外包裝 | |
無鉛/環保 | 無鉛/環保 |
電壓(伏) | 1.35V |
溫度規格 | 0 C~+85 C |
速度 | 1866 MBPS |
標準包裝數量 | |
標準外箱 | |
Number Of Words | 256M |
Bit Organization | x16 |
Density | 4G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Low VDD(1.35V) |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
MT41K256M16LY-107:P | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16RE-107 ES:D | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16RE-107:D | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16TE-107:P | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16TW-107 | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16TW-107 : P TR FBGA- | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16TW-107 AT:P | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16TW-107 ES:P | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16TW-107 ES:R | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16TW-107 IT:P TRAY | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |