Bilder dienen nur der Illustration
Hersteller-Nummer | K4H5108383M-TCB3 |
Hersteller | SAMSUNG |
Produktkategorie | DDR1 SDRAM |
IC-Code | 64MX8 DDR1 |
Gehäuse | TSOP2(66) |
Verpackung | |
RoHS | Leaded |
Spannungsversorgung | 2.5 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 166 MHZ |
Standard Stückzahl | |
Abmessungen Karton |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
IS43R86400D-6T | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
IS43R86400D-6TL | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
IS43R86400D-6TL-TR | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
IS43R86400E-6T | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
IS43R86400E-6TL | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
IS43R86400E-6TL-TR | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
IS43R86400F-6T | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
IS43R86400F-6TL | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
IS43R86400F-6TL-TR | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
K4H510838B-NCB3 | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |