Bilder dienen nur der Illustration
Hersteller-Nummer | K4H5108383M-TCB3 |
Hersteller | SAMSUNG |
Produktkategorie | DDR1 SDRAM |
IC-Code | 64MX8 DDR1 |
Gehäuse | TSOP2(66) |
Verpackung | |
RoHS | Leaded |
Spannungsversorgung | 2.5 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 166 MHZ |
Standard Stückzahl | |
Abmessungen Karton |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
K4H510838B-NLB3 | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
K4H510838B-TC/LB3 | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
K4H510838B-TCB3 | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
K4H510838B-TCB3 | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
K4H510838B-TCB30 | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
K4H510838B-TCB3000 | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
K4H510838B-TCB3T | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
K4H510838B-TCB3T | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
K4H510838B-TCB3T00 | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
K4H510838B-TCBO | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |