K4H510838B-TCB3
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4H510838B-TCB3 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR1 SDRAM |
| IC-Code | 64MX8 DDR1 |
| Andere Bezeichnungen | K4H510838B-TCB30 |
| K4H510838B-TCB3000 | |
| K4H510838B-TCB3T | |
| K4H510838B-TCB3T00 |
Produktbeschreibung
| Gehäuse | TSOP2(66) |
| Verpackung | |
| RoHS | Leaded |
| Spannungsversorgung | 2.5 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 166 MHZ |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 64M |
| Bit Organization | x8 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Power | Normal Power |
| Generation | 3rd Generation |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4H510838B-TCB3 | 5.500 | Anfrage senden | |
| K4H510838B-TCB3 | 513 | Anfrage senden | |
| K4H510838B-TCB3 | 1.478 | 2007+ | Anfrage senden |
| K4H510838B-TCB3 | 8.000 | Anfrage senden | |
| K4H510838B-TCB3 | 6.869 | Anfrage senden | |
| K4H510838B-TCB3 | 74 | Anfrage senden | |
| K4H510838B-TCB3 | 101 | Anfrage senden | |
| K4H510838B-TCB3 | 2.000 | 2005 | Anfrage senden |
| K4H510838B-TCB3 | 2.000 | Anfrage senden | |
| K4H510838B-TCB3 | 70 | 2003+ | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| IS43R86400D-6T | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| IS43R86400D-6TL | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| IS43R86400D-6TL-TR | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| IS43R86400E-6T | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| IS43R86400E-6TL | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| IS43R86400E-6TL-TR | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| IS43R86400F-6T | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| IS43R86400F-6TL | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| IS43R86400F-6TL-TR | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| K4H5108383M-TCB3 | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |