Bilder dienen nur der Illustration
Hersteller-Nummer | K4H510838ETCCC |
Hersteller | SAMSUNG |
Produktkategorie | DDR1 SDRAM |
IC-Code | 64MX8 DDR1 |
Gehäuse | TSOP2(66) |
Verpackung | |
RoHS | Leaded |
Spannungsversorgung | 2.5 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 200 MHZ |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 64M |
Bit Organization | x8 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 6th Generation |
Power | Normal Power |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
K4H510838C-UCC | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
K4H510838C-UCCC | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
K4H510838C-UCCC | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
K4H510838C-UCCC000 | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
K4H510838C-UCCC0MJ/0RA | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
K4H510838C-UCCCT | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
K4H510838C-ULCC | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
K4H510838CDCCC | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
K4H510838CTCCCUCCC | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
K4H510838CUCLCC | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |