K4H510838EUCCC

Produktübersicht

IC Picture

Bilder dienen nur der Illustration

Hersteller-Nummer K4H510838EUCCC
Hersteller SAMSUNG
Produktkategorie DDR1 SDRAM
IC-Code 64MX8 DDR1

Produktbeschreibung

Gehäuse TSOP2(66)
Verpackung
RoHS RoHS
Spannungsversorgung 2.5 V
Betriebstemperatur 0 C~+85 C
Geschwindigkeit 200 MHZ
Standard Stückzahl
Abmessungen Karton
Number Of Words 64M
Bit Organization x8
Density 512M
Internal Banks 4 Banks
Generation 6th Generation
Power Normal Power

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
IS43R86400F-5TL-TR TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H510838-TCCC TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H510838B-LCCC TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H510838B-NCCC TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H510838B-NLCC TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H510838B-TCC TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H510838B-TCCC TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H510838B-TLCC TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H510838B-UCCC TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H510838B-ULCC TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C