Bilder dienen nur der Illustration
Hersteller-Nummer | K4H511638CUPB3 |
Hersteller | SAMSUNG |
Produktkategorie | DDR1 SDRAM |
IC-Code | 32MX16 DDR1 |
Gehäuse | TSOP2(66) |
Verpackung | |
RoHS | Leaded |
Spannungsversorgung | 2.5 V |
Betriebstemperatur | -40 C~+85 C |
Geschwindigkeit | 166 MHZ |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 4th Generation |
Power | Low Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4H511638CUPB3 | 4.000 | Anfrage senden | |
K4H511638CUPB3 | 9.600 | 14+ | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
K4H511638D-UPB3 | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
K4H511638F-LIB3 | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
K4H511638F-LIB3000 | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
K4H511638F-LPB3 | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
K4H511638F-LPB30 | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
K4H511638J-LIB3 | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
K4H511638J-LPB3 | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |