K4H511638D-UPB0
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4H511638D-UPB0 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR1 SDRAM |
| IC-Code | 32MX16 DDR1 |
Produktbeschreibung
| Gehäuse | TSOP2(66) |
| Verpackung | TRAY |
| RoHS | Leaded |
| Spannungsversorgung | 2.5 V |
| Betriebstemperatur | -40 C~+85 C |
| Geschwindigkeit | 133 MHZ |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 32M |
| Bit Organization | x16 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Power | Low Power |
| Generation | 5th Generation |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4H511638D-UPB0 | 2.000 | 2009+ | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| EDD5116ADTA-7ALI | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |
| EDD5116ADTA-7ATI | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |
| EDD5116AGTA-7BLI-E | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |
| HY5DU121622BTPJITR | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |
| HY5DU121622CLTP-JI-C | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |
| HY5DU121622CLTPJ | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |
| HY5DU121622CTP-JI | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |
| HY5DU121622DLTP-J- | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |
| HY5DU121622DLTP-J-C | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |
| HY5DU121622DLTP-JI | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |