K4H511638D-UPB0
Product Overview
Images are for reference only
| Manufacturer Part No | K4H511638D-UPB0 |
| Brand | SAMSUNG |
| Item | DDR1 SDRAM |
| Part No | 32MX16 DDR1 |
Product Details
| Package | TSOP2(66) |
| Outpack | TRAY |
| RoHS | Leaded |
| Voltage | 2.5 V |
| Temperature | -40 C~+85 C |
| Speed | 133 MHZ |
| Std. Pack Qty | |
| Std. Carton | |
| Number Of Words | 32M |
| Bit Organization | x16 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Generation | 5th Generation |
| Power | Low Power |
Available Offers
| Description | Qty | Datecode | |
|---|---|---|---|
| K4H511638D-UPB0 | 2,000 | 2009+ | Get Quote |
FFFE (Form, Fit & Functional Equivalents)
| Description | Package | Voltage | Speed | Temperature |
|---|---|---|---|---|
| EDD5116ADTA-7ALI | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |
| EDD5116ADTA-7ATI | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |
| EDD5116AGTA-7BLI-E | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |
| K4H511638D-UIB0 | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |