Bilder dienen nur der Illustration
Hersteller-Nummer | K4H561638H-UPB3 |
Hersteller | SAMSUNG |
Produktkategorie | DDR1 SDRAM |
IC-Code | 16MX16 DDR1 |
Gehäuse | TSOP2(66) |
Verpackung | |
RoHS | Leaded |
Spannungsversorgung | 2.5 V |
Betriebstemperatur | -40 C~+85 C |
Geschwindigkeit | 166 MHZ |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 16M |
Bit Organization | x16 |
Density | 256M |
Internal Banks | 4 Banks |
Generation | 9th Generation |
Power | Low Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4H561638H-UPB3 | 4.000 | Anfrage senden | |
K4H561638H-UPB3 | 2.000 | 2009+ | Anfrage senden |
K4H561638H-UPB3 | 1.664 | 2007+ | Anfrage senden |
K4H561638H-UPB3 | 8.862 | 09+ | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
EDD2516AETA-6BTI-E | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
EDD2516AKTA-6B-LI | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
EDD2516AKTA-6BTI | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
EDD2516AKTA-6BTI-E | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
EDD2516AKTA6BLIE | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
EDD2516KCTA-6BSI-E | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
H5DU2562GTR-J3I | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
H5DU2562GTR-J3IR | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
IS43R16160B-6TLI | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
IS43R16160D-6TLA1 | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |