Bilder dienen nur der Illustration
| Hersteller-Nummer | K4H561638J-LICC |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR1 SDRAM |
| IC-Code | 16MX16 DDR1 |
| Gehäuse | TSOP2(66) |
| Verpackung | |
| RoHS | Leaded |
| Spannungsversorgung | 2.5 V |
| Betriebstemperatur | -40 C~+85 C |
| Geschwindigkeit | 200 MHZ |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 16M |
| Bit Organization | x16 |
| Density | 256M |
| Internal Banks | 4 Banks |
| Power | Normal Power |
| Generation | 11th Generation |
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4H561638J-LICC | 4.000 | Anfrage senden | |
| K4H561638J-LICC | 2.000 | 2009+ | Anfrage senden |
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| A3S56D40ETP-G5I | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
| A3S56D40FTP-G5I | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
| EDD2516AKTA5BTI | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
| EDD2516AKTA5CLI | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
| EDD2516AKTA5CLIE | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
| H5DU2562GTR-E3I | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
| HY5DU561622CT-D43HYNIX | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
| HY5DU561622DLTPD43I | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
| IS43R16160B-5TI | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
| IS43R16160B-5TI-TR | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |