Bilder dienen nur der Illustration
| Hersteller-Nummer | K4M281633F-RN75 |
| Hersteller | SAMSUNG |
| Produktkategorie | SDRAM MOBILE |
| IC-Code | 8MX16 SD |
| Andere Bezeichnungen | K4M281633F-RN750 |
| K4M281633F-RN75000 | |
| K4M281633F-RN750JR | |
| K4M281633F-RN75T00 | |
| K4M281633FRN7500 |
| Gehäuse | FBGA-54 |
| Verpackung | |
| RoHS | Leaded |
| Spannungsversorgung | 3.3 V |
| Betriebstemperatur | -40 C~+125 C |
| Geschwindigkeit | 133 MHZ |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 8M |
| Bit Organization | x16 |
| Density | 128M |
| Internal Banks | 4 Banks |
| Power | Low, i-TCSR |
| Generation | 7th Generation |
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4M281633F-RN75 | 1.040 | Anfrage senden | |
| K4M281633F-RN75000 | 4.000 | Anfrage senden | |
| K4M281633F-RN75 | 270 | DC04 | Anfrage senden |
| K4M281633F-RN75 | 270 | 4 | Anfrage senden |
| K4M281633F-RN75 | 1.099 | Anfrage senden | |
| K4M281633F-RN75 | 270 | DC0452 | Anfrage senden |
| K4M281633F-RN75 | 330 | DC0452 | Anfrage senden |
| K4M281633F-RN750 | 18 | Anfrage senden | |
| K4M281633F-RN75 | 2.048 | Anfrage senden | |
| K4M281633F-RN75 | 11.500 | 200802+ | Anfrage senden |
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| K4M281633-RN75 | FBGA-54 | 3.3 V | 133 MHZ | -40 C~+125 C |
| K4M281633-RN75000 | FBGA-54 | 3.3 V | 133 MHZ | -40 C~+125 C |
| K4M281633D/F-RN75 | FBGA-54 | 3.3 V | 133 MHZ | -40 C~+125 C |
| K4M281633E-RN75T00 | FBGA-54 | 3.3 V | 133 MHZ | -40 C~+125 C |
| K4M281633F-RENGCLF75 | FBGA-54 | 3.3 V | 133 MHZ | -40 C~+125 C |
| K4M281633H-RE75 | FBGA-54 | 3.3 V | 133 MHZ | -40 C~+125 C |
| K4M281633H-RN75 | FBGA-54 | 3.3 V | 133 MHZ | -40 C~+125 C |
| K4M281633HRN75T00 | FBGA-54 | 3.3 V | 133 MHZ | -40 C~+125 C |