K4M281633H-RN75
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4M281633H-RN75 |
| Hersteller | SAMSUNG |
| Produktkategorie | SDRAM MOBILE |
| IC-Code | 8MX16 SD |
| Andere Bezeichnungen | K4M281633H-RN750 |
| K4M281633H-RN75T | |
| K4M281633HRN75T00 |
Produktbeschreibung
| Gehäuse | FBGA-54 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 3.3 V |
| Betriebstemperatur | -40 C~+125 C |
| Geschwindigkeit | 133 MHZ |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 8M |
| Bit Organization | x16 |
| Density | 128M |
| Internal Banks | 4 Banks |
| Power | Low, i-TCSR |
| Generation | 9th Generation |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4M281633H-RN75 | 4.000 | Anfrage senden | |
| K4M281633H-RN75 | 100 | 7 | Anfrage senden |
| K4M281633H-RN75 | 11.367 | Anfrage senden | |
| K4M281633H-RN75 | 3.100 | Anfrage senden | |
| K4M281633H-RN75T | 3.241 | 09+ | Anfrage senden |
| K4M281633H-RN750 | 854 | 09+ | Anfrage senden |
| K4M281633H-RN75 | 11.500 | 2008+ | Anfrage senden |
| K4M281633H-RN750 | 1.756 | 2007+ | Anfrage senden |
| K4M281633H-RN75 | 20.000 | 2006+ | Anfrage senden |
| K4M281633H-RN75 | 8.000 | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| K4M281633-RN75 | FBGA-54 | 3.3 V | 133 MHZ | -40 C~+125 C |
| K4M281633-RN75000 | FBGA-54 | 3.3 V | 133 MHZ | -40 C~+125 C |
| K4M281633D/F-RN75 | FBGA-54 | 3.3 V | 133 MHZ | -40 C~+125 C |
| K4M281633E-RN75T00 | FBGA-54 | 3.3 V | 133 MHZ | -40 C~+125 C |
| K4M281633F-RENGCLF75 | FBGA-54 | 3.3 V | 133 MHZ | -40 C~+125 C |
| K4M281633F-RN75 | FBGA-54 | 3.3 V | 133 MHZ | -40 C~+125 C |
| K4M281633F-RN75000 | FBGA-54 | 3.3 V | 133 MHZ | -40 C~+125 C |
| K4M281633F-RN750JR | FBGA-54 | 3.3 V | 133 MHZ | -40 C~+125 C |
| K4M281633F-RN75T00 | FBGA-54 | 3.3 V | 133 MHZ | -40 C~+125 C |
| K4M281633FRN7500 | FBGA-54 | 3.3 V | 133 MHZ | -40 C~+125 C |