Bilder dienen nur der Illustration
| Hersteller-Nummer | K4M561633G-RN75 |
| Hersteller | SAMSUNG |
| Produktkategorie | SDRAM MOBILE |
| IC-Code | 16MX16 SD |
| Andere Bezeichnungen | K4M561633G-RN750 |
| K4M561633G-RN75000 | |
| K4M561633G-RN75T00 | |
| K4M561633GRN75T |
| Gehäuse | FBGA-54 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 3.0V/3.3V |
| Betriebstemperatur | -25 C~+85 C |
| Geschwindigkeit | 133 MHZ |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 16M |
| Bit Organization | x16 |
| Density | 256M |
| Internal Banks | 4 Banks |
| Power | Low, i-TCSR |
| Generation | 8th Generation |
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4M561633G-RN75000 | 5.500 | Anfrage senden | |
| K4M561633G-RN75 | 565 | DC08 | Anfrage senden |
| K4M561633G-RN75000 | 570 | DC07+ | Anfrage senden |
| K4M561633G-RN75000 | 570 | 07+ | Anfrage senden |
| K4M561633G-RN75 | 200 | 9 | Anfrage senden |
| K4M561633G-RN75T00 | 5.017 | 2008+ | Anfrage senden |
| K4M561633G-RN75 | 3.200 | Anfrage senden | |
| K4M561633GRN75T | 2.568 | 09+ | Anfrage senden |
| K4M561633G-RN750 | 1.025 | 09+ | Anfrage senden |
| K4M561633G-RN75 | 8.925 | 2006+ | Anfrage senden |
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| K4M561633G-75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4M561633G-BC75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4M561633G-BE75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4M561633G-BF75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4M561633G-BN75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4M561633G-BN75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4M561633G-BN750 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4M561633G-BN75000 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4M561633G-BN750JR | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4M561633G-BN75T | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |