K4M641633H-RE75
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4M641633H-RE75 |
| Hersteller | SAMSUNG |
| Produktkategorie | SDRAM MOBILE |
| IC-Code | 4MX16 SD |
Produktbeschreibung
| Gehäuse | FBGA-54 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 3.0V/3.3V |
| Betriebstemperatur | -25 C~+85 C |
| Geschwindigkeit | 133 MHZ |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 4M |
| Bit Organization | x16 |
| Density | 64M |
| Internal Banks | 4 Banks |
| Generation | 9th Generation |
| Power | Normal |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| K4M641633KBN75-TJR | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4M641633KRN75000 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4S641633F-BN75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4S641633F-FN75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4S641633F-RN75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4S641633F-RN75000 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4S641633H-BN75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4S641633H-BN75000 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4S641633H-BN75000 25 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4S641633H-F75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |