Bilder dienen nur der Illustration
| Hersteller-Nummer | K4S283233F-HN1L |
| Hersteller | SAMSUNG |
| Produktkategorie | SDRAM MOBILE |
| IC-Code | 4MX32 SD |
| Andere Bezeichnungen | K4S283233F-HN1L000 |
| Gehäuse | FBGA-90 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 3.0V/3.3V |
| Betriebstemperatur | -25 C~+85 C |
| Geschwindigkeit | 100 MHZ |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 4M |
| Bit Organization | x32 |
| Density | 128M |
| Internal Banks | 4 Banks |
| Power | Low, i-TCSR |
| Generation | 7th Generation |
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4S283233F-HN1L | 4.000 | Anfrage senden | |
| K4S283233F-HN1L | 1.925 | 2007+ | Anfrage senden |
| K4S283233F-HN1L | 2.240 | 2004+ | Anfrage senden |
| K4S283233F-HN1L | 1.000 | Anfrage senden | |
| K4S283233F-HN1L | 12.000 | Anfrage senden | |
| K4S283233F-HN1L | 1.389 | Anfrage senden | |
| K4S283233F-HN1L | 1.318 | 2004+ | Anfrage senden |
| K4S283233F-HN1L | 1.318 | 200407+ | Anfrage senden |
| K4S283233F-HN1L | 2.240 | 04+ | Anfrage senden |
| K4S283233F-HN1L | 2.240 | Anfrage senden |
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| K4S283233E-DH1L | FBGA-90 | 3.0V/3.3V | 100 MHZ | -25 C~+85 C |
| K4S283233E-DM1L | FBGA-90 | 3.0V/3.3V | 100 MHZ | -25 C~+85 C |
| K4S283233E-DN1H | FBGA-90 | 3.0V/3.3V | 100 MHZ | -25 C~+85 C |
| K4S283233E-DN1H000 | FBGA-90 | 3.0V/3.3V | 100 MHZ | -25 C~+85 C |
| K4S283233E-DN1L | FBGA-90 | 3.0V/3.3V | 100 MHZ | -25 C~+85 C |
| K4S283233EHN1L | FBGA-90 | 3.0V/3.3V | 100 MHZ | -25 C~+85 C |
| K4S283233ESN1L | FBGA-90 | 3.0V/3.3V | 100 MHZ | -25 C~+85 C |
| K4S283233F-F1H | FBGA-90 | 3.0V/3.3V | 100 MHZ | -25 C~+85 C |
| K4S283233F-F1L | FBGA-90 | 3.0V/3.3V | 100 MHZ | -25 C~+85 C |
| K4S283233F-FC1H | FBGA-90 | 3.0V/3.3V | 100 MHZ | -25 C~+85 C |