K4S643232H-TL50

Produktübersicht

IC Picture

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Hersteller-Nummer K4S643232H-TL50
Hersteller SAMSUNG
Produktkategorie SDRAM
IC-Code 2MX32 SD

Produktbeschreibung

Gehäuse TSOP2(86)
Verpackung TRAY
RoHS Leaded
Spannungsversorgung 3.3 V
Betriebstemperatur 0 C~+85 C
Geschwindigkeit 200 MHZ
Standard Stückzahl
Abmessungen Karton
Number Of Words 2M
Bit Organization x32
Density 64M
Internal Banks 4 Banks
Generation 9th Generation
Power Low Power

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Verfügbare Angebote

Teilenummer Menge Datecode
K4S643232H-TL50 7.000 2009+ Anfrage senden
K4S643232H-TL50 2.548 2007+ Anfrage senden
K4S643232H-TL50 6.000 Anfrage senden
K4S643232H-TL50 7.000 Anfrage senden
K4S643232H-TL50 12.000 Anfrage senden
K4S643232H-TL50 10.000 Anfrage senden
K4S643232H-TL50 5.000 2004+ Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
IC42S32200/L-5T TSOP2(86) 3.3 V 200 MHZ 0 C~+85 C
IS42S32200L-5BC TSOP2(86) 3.3 V 200 MHZ 0 C~+85 C
IS42S32200L-5T TSOP2(86) 3.3 V 200 MHZ 0 C~+85 C
IS42S32200L-5TC TSOP2(86) 3.3 V 200 MHZ 0 C~+85 C
K4S643232C-TC50T00 TSOP2(86) 3.3 V 200 MHZ 0 C~+85 C
K4S643232CTC50 TSOP2(86) 3.3 V 200 MHZ 0 C~+85 C
K4S643232E-RC50 TSOP2(86) 3.3 V 200 MHZ 0 C~+85 C
K4S643232E-TC/L50 TSOP2(86) 3.3 V 200 MHZ 0 C~+85 C
K4S643232E-TC/TL50 TSOP2(86) 3.3 V 200 MHZ 0 C~+85 C
K4S643232E-TC45 TSOP2(86) 3.3 V 200 MHZ 0 C~+85 C