K4S643232H-TL50

产品概述

IC Picture

图片仅供参考

制造商IC编号 K4S643232H-TL50
厂牌 SAMSUNG/三星
IC 类别 SDRAM
IC代码 2MX32 SD

产品详情

脚位/封装 TSOP2(86)
外包装 TRAY
无铅/环保 含铅
电压(伏) 3.3 V
温度规格 0 C~+85 C
速度 200 MHZ
标准包装数量
标准外箱
Number Of Words 2M
Bit Organization x32
Density 64M
Internal Banks 4 Banks
Generation 9th Generation
Power Low Power

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

供应链有货

IC 编号 数量 生产年份
K4S643232H-TL50 7,000 2009+ 索取报价
K4S643232H-TL50 2,548 2007+ 索取报价
K4S643232H-TL50 6,000 索取报价
K4S643232H-TL50 7,000 索取报价
K4S643232H-TL50 12,000 索取报价
K4S643232H-TL50 10,000 索取报价
K4S643232H-TL50 5,000 2004+ 索取报价

FFFE/互通料号 (形式，腳位和功能对等)

IC 编号 脚位/封装 电压(伏) 速度 温度规格
IC42S32200/L-5T TSOP2(86) 3.3 V 200 MHZ 0 C~+85 C
IS42S32200L-5BC TSOP2(86) 3.3 V 200 MHZ 0 C~+85 C
IS42S32200L-5T TSOP2(86) 3.3 V 200 MHZ 0 C~+85 C
IS42S32200L-5TC TSOP2(86) 3.3 V 200 MHZ 0 C~+85 C
K4S643232C-TC50T00 TSOP2(86) 3.3 V 200 MHZ 0 C~+85 C
K4S643232CTC50 TSOP2(86) 3.3 V 200 MHZ 0 C~+85 C
K4S643232E-RC50 TSOP2(86) 3.3 V 200 MHZ 0 C~+85 C
K4S643232E-TC/L50 TSOP2(86) 3.3 V 200 MHZ 0 C~+85 C
K4S643232E-TC/TL50 TSOP2(86) 3.3 V 200 MHZ 0 C~+85 C
K4S643232E-TC45 TSOP2(86) 3.3 V 200 MHZ 0 C~+85 C