K4S643232H-UI60
Produktbeschreibung
| Gehäuse | TSOP2(86) |
| Verpackung | TRAY |
| RoHS | RoHS |
| Spannungsversorgung | 3.3 V |
| Betriebstemperatur | -40 C~+85 C |
| Geschwindigkeit | 166 MHZ |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 2M |
| Bit Organization | x32 |
| Density | 64M |
| Internal Banks | 4 Banks |
| Generation | 9th Generation |
| Power | Normal Power |
GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| AS4C2M32S-6TIN | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
| AS4C2M32SA-6TIN | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
| AS4C2M32SA-6TINTR | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
| EM638325TS-6IG | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
| HY57V643220CLT-6I | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
| HY57V643220CT-6HYNI | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
| HY57V643220CT-6I | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
| HY57V643220CT60I | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
| HY57V643220DLTP-6I | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
| HY57V643220DTP-6I | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |