Gehäuse | TSOP2(86) |
Verpackung | TRAY |
RoHS | RoHS |
Spannungsversorgung | 3.3 V |
Betriebstemperatur | -40 C~+85 C |
Geschwindigkeit | 166 MHZ |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 2M |
Bit Organization | x32 |
Density | 64M |
Internal Banks | 4 Banks |
Generation | 9th Generation |
Power | Normal Power |
GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
IS42S32200B-6TI | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
IS42S32200B-6TI-TR | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
IS42S32200B-6TLI | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
IS42S32200C1-6TLI | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
IS42S32200E-6TLA1 | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
IS42S32200E-6TLI | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
IS42S32200H-6TLI | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
IS42S32200L-6TI | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
IS42S32200L-6TLA1 | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
IS42S32200L-6TLA1-TR | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |