K4S643232H-UI60

Produktübersicht

IC Picture

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Hersteller-Nummer K4S643232H-UI60
Hersteller SAMSUNG
Produktkategorie SDRAM
IC-Code 2MX32 SD

Produktbeschreibung

Gehäuse TSOP2(86)
Verpackung TRAY
RoHS RoHS
Spannungsversorgung 3.3 V
Betriebstemperatur -40 C~+85 C
Geschwindigkeit 166 MHZ
Standard Stückzahl
Abmessungen Karton
Number Of Words 2M
Bit Organization x32
Density 64M
Internal Banks 4 Banks
Generation 9th Generation
Power Normal Power

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
K4S643232H-TI6000 TSOP2(86) 3.3 V 166 MHZ -40 C~+85 C
K4S643232H-TI60000 TSOP2(86) 3.3 V 166 MHZ -40 C~+85 C
K4S643232H-TP60 TSOP2(86) 3.3 V 166 MHZ -40 C~+85 C
K4S643232HTI60TCV TSOP2(86) 3.3 V 166 MHZ -40 C~+85 C
M12L64322A-6TIG TSOP2(86) 3.3 V 166 MHZ -40 C~+85 C
M12L64322A-6TIG2U TSOP2(86) 3.3 V 166 MHZ -40 C~+85 C
MT48LC2M32B22P-6IT:G TSOP2(86) 3.3 V 166 MHZ -40 C~+85 C
MT48LC2M32B2P-6 IT:G TSOP2(86) 3.3 V 166 MHZ -40 C~+85 C
MT48LC2M32B2P-6IT TSOP2(86) 3.3 V 166 MHZ -40 C~+85 C
MT48LC2M32B2P-6IT:GTR TSOP2(86) 3.3 V 166 MHZ -40 C~+85 C