K4S643233H-FN75
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4S643233H-FN75 |
| Hersteller | SAMSUNG |
| Produktkategorie | SDRAM MOBILE |
| IC-Code | 2MX32 SD |
| Andere Bezeichnungen | K4S643233H-FN750 |
| K4S643233H-FN75000 | |
| K4S643233HFN750JR |
Produktbeschreibung
| Gehäuse | FBGA-90 |
| Verpackung | |
| RoHS | Leaded |
| Spannungsversorgung | 3.0V/3.3V |
| Betriebstemperatur | -25 C~+85 C |
| Geschwindigkeit | 133 MHZ |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 2M |
| Bit Organization | x32 |
| Density | 64M |
| Internal Banks | 4 Banks |
| Generation | 9th Generation |
| Power | Low, i-TCSR |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4S643233H-FN75000 | 4.369 | Anfrage senden | |
| K4S643233HFN750JR | 1.000 | 05+ | Anfrage senden |
| K4S643233H-FN75000 | 4.510 | Anfrage senden | |
| K4S643233H-FN75000 | 640 | Anfrage senden | |
| K4S643233H-FN75000 | 5.412 | 05-06 | Anfrage senden |
| K4S643233H-FN75000 | 768 | 05-06 | Anfrage senden |
| K4S643233HFN750JR | 12.350 | Anfrage senden | |
| K4S643233H-FN75 | 2.000 | 2004+ | Anfrage senden |
| K4S643233H-FN75000 | 585 | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| K4S643233F-DE75 | FBGA-90 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4S643233F-DN750 | FBGA-90 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4S643233F-SE75 | FBGA-90 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4S643233F-SN75 | FBGA-90 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4S643233F-SN750 | FBGA-90 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4S643233FDE75000 | FBGA-90 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4S643233FSE75000 | FBGA-90 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4S643233H-FE75 | FBGA-90 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4S643233H-HE75 | FBGA-90 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4S643233H-HN750 | FBGA-90 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |