Bilder dienen nur der Illustration
Hersteller-Nummer | K4T1G164QE-BCE6 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 64MX16 DDR2 |
Gehäuse | FBGA-84 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 667 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Normal Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T1G164QE-BCE6 | 5.500 | Anfrage senden | |
K4T1G164QE-BCE6 | 12.500 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
K4T1G164QE-HCE60JR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G164QE-HCE6: | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G164QE-HCE6T | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G164QE-HCE6T00 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G164QE-HCE6T000 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G164QE-HCE7/E6 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G164QE-HELE6 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G164QE-HIE6 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G164QE-HIE6000 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G164QE-HLE6 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |