Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T1G164QE-HCE6 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 64MX16 DDR2 |
| Andere Bezeichnungen | K4T1G164QE-HCE60 |
| K4T1G164QE-HCE6000 | |
| K4T1G164QE-HCE60JR | |
| K4T1G164QE-HCE6: | |
| K4T1G164QE-HCE6T | |
| K4T1G164QE-HCE6T00 | |
| K4T1G164QE-HCE6T000 |
| Gehäuse | FBGA-84 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 667 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 64M |
| Bit Organization | x16 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Power | Normal Power |
| Generation | 6th Generation |
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4T1G164QE-HCE6 | 8.332 | Anfrage senden | |
| K4T1G164QE-HCE6 | 12.800 | Anfrage senden | |
| K4T1G164QE-HCE6 | 922 | Anfrage senden | |
| K4T1G164QE-HCE6 | 44 | 1007+ | Anfrage senden |
| K4T1G164QE-HCE6 | 5.000 | 21+ | Anfrage senden |
| K4T1G164QE-HCE6 | 20.000 | 09+ | Anfrage senden |
| K4T1G164QE-HCE6 | 4 | DC09 | Anfrage senden |
| K4T1G164QE-HCE6 | 4 | 9 | Anfrage senden |
| K4T1G164QE-HCE6 | 1.280 | 10+ | Anfrage senden |
| K4T1G164QE-HCE6 | 294 | 2011 | Anfrage senden |
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| EM68C16CWQD-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| EM68C16CWQE-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| EM68C16CWVB-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T1G160BF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T1G160C2C-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T1G160C2F-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T1G160C2FL-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T1G160CF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18TC 1G160BF-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18TC1G1602F-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |