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| Manufacturer Part No | K4T1G164QE-HCE6 |
| Brand | SAMSUNG |
| Item | DDR2 SDRAM |
| Part No | 64MX16 DDR2 |
| Alternate Names | K4T1G164QE-HCE60 |
| K4T1G164QE-HCE6000 | |
| K4T1G164QE-HCE60JR | |
| K4T1G164QE-HCE6: | |
| K4T1G164QE-HCE6T | |
| K4T1G164QE-HCE6T00 | |
| K4T1G164QE-HCE6T000 |
| Package | FBGA-84 |
| Outpack | |
| RoHS | RoHS |
| Voltage | 1.8 V |
| Temperature | 0 C~+85 C |
| Speed | 667 MBPS |
| Std. Pack Qty | |
| Std. Carton | |
| Number Of Words | 64M |
| Bit Organization | x16 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Power | Normal Power |
| Generation | 6th Generation |
| Description | Qty | Datecode | |
|---|---|---|---|
| K4T1G164QE-HCE6 | 8,332 | Get Quote | |
| K4T1G164QE-HCE6 | 12,800 | Get Quote | |
| K4T1G164QE-HCE6 | 922 | Get Quote | |
| K4T1G164QE-HCE6 | 44 | 1007+ | Get Quote |
| K4T1G164QE-HCE6 | 5,000 | 21+ | Get Quote |
| K4T1G164QE-HCE6 | 20,000 | 09+ | Get Quote |
| K4T1G164QE-HCE6 | 4 | DC09 | Get Quote |
| K4T1G164QE-HCE6 | 4 | 9 | Get Quote |
| K4T1G164QE-HCE6 | 1,280 | 10+ | Get Quote |
| K4T1G164QE-HCE6 | 294 | 2011 | Get Quote |
| Description | Package | Voltage | Speed | Temperature |
|---|---|---|---|---|
| EM68C16CWQD-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| EM68C16CWQE-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| EM68C16CWVB-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T1G160BF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T1G160C2C-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T1G160C2F-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T1G160C2FL-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T1G160CF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18TC 1G160BF-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18TC1G1602F-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |