Bilder dienen nur der Illustration
Hersteller-Nummer | K4T1G164QE-HCE6 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 64MX16 DDR2 |
Andere Bezeichnungen | K4T1G164QE-HCE60 |
K4T1G164QE-HCE6000 | |
K4T1G164QE-HCE60JR | |
K4T1G164QE-HCE6: | |
K4T1G164QE-HCE6T | |
K4T1G164QE-HCE6T00 | |
K4T1G164QE-HCE6T000 |
Gehäuse | FBGA-84 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 667 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Normal Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T1G164QE-HCE6 | 9.600 | 14+ | Anfrage senden |
K4T1G164QE-HCE6 | 11.350 | 16+ | Anfrage senden |
K4T1G164QE-HCE6 | 6.017 | 1028+ | Anfrage senden |
K4T1G164QE-HCE6 | 700 | Anfrage senden | |
K4T1G164QE-HCE6 | 0 | Anfrage senden | |
K4T1G164QE-HCE6 | 24.324 | 10+ | Anfrage senden |
K4T1G164QE-HCE6 | 580 | Anfrage senden | |
K4T1G164QE-HCE6 | 1.211 | Anfrage senden | |
K4T1G164QE-HCE6 | 12.800 | 2012+ | Anfrage senden |
K4T1G164QE-HCE6 | 8.277 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
EM68C16CWQD-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
EM68C16CWVB-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T1G160BF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T1G160C2C-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T1G160C2F-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T1G160C2FL-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T1G160CF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18TC 1G160BF-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18TC1G1602F-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18TC1G160C2F-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |