Bilder dienen nur der Illustration
Hersteller-Nummer | K4T1G164QE-HCE6 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 64MX16 DDR2 |
Andere Bezeichnungen | K4T1G164QE-HCE60 |
K4T1G164QE-HCE6000 | |
K4T1G164QE-HCE60JR | |
K4T1G164QE-HCE6: | |
K4T1G164QE-HCE6T | |
K4T1G164QE-HCE6T00 | |
K4T1G164QE-HCE6T000 |
Gehäuse | FBGA-84 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 667 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Normal Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T1G164QE-HCE6 | 12.800 | Anfrage senden | |
K4T1G164QE-HCE6 | 922 | Anfrage senden | |
K4T1G164QE-HCE6 | 44 | 1007+ | Anfrage senden |
K4T1G164QE-HCE6 | 5.000 | 21+ | Anfrage senden |
K4T1G164QE-HCE6 | 20.000 | 09+ | Anfrage senden |
K4T1G164QE-HCE6 | 4 | DC09 | Anfrage senden |
K4T1G164QE-HCE6 | 4 | 9 | Anfrage senden |
K4T1G164QE-HCE6 | 1.280 | 10+ | Anfrage senden |
K4T1G164QE-HCE6 | 294 | 2011 | Anfrage senden |
K4T1G164QE-HCE6 | 12.500 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
MT47H64M16JM-3:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16M16HR-3:H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16NF-25E:M 1368 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16U68A3WC1 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16V68A3WC1 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
W971GG6IB3 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
W971GG6JB-3 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
W971GG6PB-3 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |