圖片僅供參考
製造商IC編號 | K4T1G164QE-HCE6 |
廠牌 | SAMSUNG/三星 |
IC 類別 | DDR2 SDRAM |
IC代碼 | 64MX16 DDR2 |
共通IC編號 | K4T1G164QE-HCE60 |
K4T1G164QE-HCE6000 | |
K4T1G164QE-HCE60JR | |
K4T1G164QE-HCE6: | |
K4T1G164QE-HCE6T | |
K4T1G164QE-HCE6T00 | |
K4T1G164QE-HCE6T000 |
脚位/封装 | FBGA-84 |
外包裝 | |
無鉛/環保 | 無鉛/環保 |
電壓(伏) | 1.8 V |
溫度規格 | 0 C~+85 C |
速度 | 667 MBPS |
標準包裝數量 | |
標準外箱 | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Normal Power |
IC 編號 | 數量 | 生產年份 | |
---|---|---|---|
K4T1G164QE-HCE6 | 12,800 | 索取報價 | |
K4T1G164QE-HCE6 | 922 | 索取報價 | |
K4T1G164QE-HCE6 | 44 | 1007+ | 索取報價 |
K4T1G164QE-HCE6 | 5,000 | 21+ | 索取報價 |
K4T1G164QE-HCE6 | 20,000 | 09+ | 索取報價 |
K4T1G164QE-HCE6 | 4 | DC09 | 索取報價 |
K4T1G164QE-HCE6 | 4 | 9 | 索取報價 |
K4T1G164QE-HCE6 | 1,280 | 10+ | 索取報價 |
K4T1G164QE-HCE6 | 294 | 2011 | 索取報價 |
K4T1G164QE-HCE6 | 12,500 | 索取報價 |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
MT47H64M16JM-3:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16M16HR-3:H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16NF-25E:M 1368 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16U68A3WC1 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16V68A3WC1 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
W971GG6IB3 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
W971GG6JB-3 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
W971GG6PB-3 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |