Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T1G164QE-HCF7 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 64MX16 DDR2 |
| Andere Bezeichnungen | K4T1G164QE-HCF7000 |
| K4T1G164QE-HCF7T00 | |
| K4T1G164QE-HCF7T000 | |
| K4T1G164QEHCF70 | |
| K4T1G164QEHCF7T |
| Gehäuse | FBGA-84 |
| Verpackung | TRAY |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 800 MBPS |
| Standard Stückzahl | 1280 |
| Abmessungen Karton | |
| Number Of Words | 64M |
| Bit Organization | x16 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Power | Normal Power |
| Generation | 6th Generation |
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4T1G164QE-HCF7 | 761 | 10+ | Anfrage senden |
| K4T1G164QE-HCF7 | 578 | 1110+ | Anfrage senden |
| K4T1G164QE-HCF7 | 130 | 1001+ | Anfrage senden |
| K4T1G164QE-HCF7 | 516 | 2013+ | Anfrage senden |
| K4T1G164QE-HCF7 | 130 | 1001 | Anfrage senden |
| K4T1G164QEHCF70 | 3.840 | 10+ | Anfrage senden |
| K4T1G164QE-HCF7 | 4.000 | Anfrage senden | |
| K4T1G164QE-HCF7 | 130 | Anfrage senden | |
| K4T1G164QE-HCF7 | 1.339 | 1110+ | Anfrage senden |
| K4T1G164QE-HCF7 | 2.640 | 1019+ | Anfrage senden |
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| #MT47H64M16HR-25EI | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| :K4T1G164QQ-HCF7 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| EM68C16CWQD-25H | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| EM68C16CWQE-25H | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| EM68C16CWQG-25H | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| EM68C16CWVB-25H | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| H5PS1G63EFR-S5C-C/A | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| H5PS1G63EFR-S6C-C 5231EA | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| H5PS1G63EFR-S6CLEADFREE | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| H5PS1G63EFR-S6L | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |