K4T1G164QE-HCF7

Produktübersicht

IC Picture

Bilder dienen nur der Illustration

Hersteller-Nummer K4T1G164QE-HCF7
Hersteller SAMSUNG
Produktkategorie DDR2 SDRAM
IC-Code 64MX16 DDR2
Andere Bezeichnungen K4T1G164QE-HCF7000
K4T1G164QE-HCF7T00
K4T1G164QE-HCF7T000
K4T1G164QEHCF70
K4T1G164QEHCF7T

Produktbeschreibung

Gehäuse FBGA-84
Verpackung TRAY
RoHS RoHS
Spannungsversorgung 1.8 V
Betriebstemperatur 0 C~+85 C
Geschwindigkeit 800 MBPS
Standard Stückzahl 1280
Abmessungen Karton
Number Of Words 64M
Bit Organization x16
Density 1G
Internal Banks 8 Banks
Generation 6th Generation
Power Normal Power

Verfügbare Angebote

Teilenummer Menge Datecode
K4T1G164QE-HCF7 516 2013+ Anfrage senden
K4T1G164QEHCF70 3.840 10+ Anfrage senden
K4T1G164QE-HCF7 4.000 Anfrage senden
K4T1G164QE-HCF7 130 Anfrage senden
K4T1G164QE-HCF7 1.339 1110+ Anfrage senden
K4T1G164QE-HCF7 2.640 1019+ Anfrage senden
K4T1G164QE-HCF7 139 1134+ Anfrage senden
K4T1G164QE-HCF7 4 201007 Anfrage senden
K4T1G164QE-HCF7 12.500 Anfrage senden
K4T1G164QE-HCF7 11.350 16+ Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
HYB18T1G160C2FL-2.5 TFBGA-84 1.8 V 800 MBPS 0 C~+85 C
HYB18T1G160C4F-2.5 TFBGA-84 1.8 V 800 MBPS 0 C~+85 C
HYB18T1G160CFL-2.5 TFBGA-84 1.8 V 800 MBPS 0 C~+85 C
HYB18TC1G160AF-5 FBGA-84 1.8 V 800 MBPS 0 C~+85 C
HYB18TC1G160BF-2.5 FBGA-84 1.8 V 800 MBPS 0 C~+85 C
HYB18TC1G160BF-5 FBGA-84 1.8 V 800 MBPS 0 C~+85 C
HYB18TC1G160C2F-2.5 FBGA-84 1.8 V 800 MBPS 0 C~+85 C
HYB18TC1G160C2F-25F FBGA-84 1.8 V 800 MBPS 0 C~+85 C
HYB18TC1G160CF-2.5 FBGA-84 1.8 V 800 MBPS 0 C~+85 C
HYB18TC1G160CF-5 FBGA-84 1.8 V 800 MBPS 0 C~+85 C