K4T1G164QF-BIE6
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T1G164QF-BIE6 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 64MX16 DDR2 |
| Andere Bezeichnungen | K4T1G164QF-BIE6000 |
| K4T1G164QF-BIE6T | |
| K4T1G164QF-BIE6T00 | |
| K4T1G164QF-BIE6TCV |
Produktbeschreibung
| Gehäuse | FBGA-84 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 667 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 64M |
| Bit Organization | x16 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Generation | 7th Generation |
| Power | Normal Power |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4T1G164QF-BIE6 | 100,000+ | Anfrage senden | |
| K4T1G164QF-BIE6 | 8.143 | Anfrage senden | |
| K4T1G164QF-BIE6 | 100,000+ | Anfrage senden | |
| K4T1G164QF-BIE6000 | 100,000+ | Anfrage senden | |
| K4T1G164QF-BIE6 | 2.000 | 2010+ | Anfrage senden |
| K4T1G164QF-BIE6000 | 980 | Anfrage senden | |
| K4T1G164QF-BIE6T | 4.000 | Anfrage senden | |
| K4T1G164QF-BIE6 | 20.480 | Anfrage senden | |
| K4T1G164QF-BIE6 | 2.250 | 11+ | Anfrage senden |
| K4T1G164QF-BIE6T00 | 26.000 | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| EM68C16CWQD-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| EM68C16CWVB-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T1G160BF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T1G160C2C-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T1G160C2F-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T1G160C2FL-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T1G160CF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18TC 1G160BF-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18TC1G1602F-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18TC1G160C2F-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |