Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T1G164QF-BPE6 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 64MX16 DDR2 |
| Andere Bezeichnungen | K4T1G164QF-BPE60 |
| K4T1G164QF-BPE60000 | |
| K4T1G164QF-BPE60CV |
| Gehäuse | FBGA-84 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | -40 C~+85 C |
| Geschwindigkeit | 667 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 64M |
| Bit Organization | x16 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Power | Low Power |
| Generation | 7th Generation |
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4T1G164QF-BPE6 | 4.000 | Anfrage senden | |
| K4T1G164QF-BPE6 | 5.000 | Anfrage senden | |
| K4T1G164QF-BPE6 | 100 | Anfrage senden | |
| K4T1G164QF-BPE60 | 13.686 | Anfrage senden | |
| K4T1G164QF-BPE60 | 24.112 | Anfrage senden | |
| K4T1G164QF-BPE60 | 24.112 | 12+ | Anfrage senden |
| K4T1G164QF-BPE60000 | 24.112 | 1228+ | Anfrage senden |
| K4T1G164QF-BPE60 | 24.112 | Anfrage senden | |
| K4T1G164QF-BPE6 | 2.000 | 2010+ | Anfrage senden |
| K4T1G164QF-BPE60CV | 42.000 | 12 | Anfrage senden |
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| HY5PS1G1631CFP-Y5I | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| HY5PS1G1631CLFP-Y5I-C | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16640A-3DBLA1 | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16640A-3DBLI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16640B-3DBI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16640B-3DBI-TR | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16640B-3DBLA1 | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16640B-3DBLI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16640BL-3DBLI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16640C-3DBI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |