K4T1G164QF-BPE6
产品概述
图片仅供参考
| 制造商IC编号 | K4T1G164QF-BPE6 |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR2 SDRAM |
| IC代码 | 64MX16 DDR2 |
| 共通IC编号 | K4T1G164QF-BPE60 |
| K4T1G164QF-BPE60000 | |
| K4T1G164QF-BPE60CV |
产品详情
| 脚位/封装 | FBGA-84 |
| 外包装 | |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.8 V |
| 温度规格 | -40 C~+85 C |
| 速度 | 667 MBPS |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 64M |
| Bit Organization | x16 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Generation | 7th Generation |
| Power | Low Power |
供应链有货
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| K4T1G164QF-BPE6 | 4,000 | 索取报价 | |
| K4T1G164QF-BPE6 | 5,000 | 索取报价 | |
| K4T1G164QF-BPE6 | 100 | 索取报价 | |
| K4T1G164QF-BPE60 | 13,686 | 索取报价 | |
| K4T1G164QF-BPE60 | 24,112 | 索取报价 | |
| K4T1G164QF-BPE60 | 24,112 | 12+ | 索取报价 |
| K4T1G164QF-BPE60000 | 24,112 | 1228+ | 索取报价 |
| K4T1G164QF-BPE60 | 24,112 | 索取报价 | |
| K4T1G164QF-BPE6 | 2,000 | 2010+ | 索取报价 |
| K4T1G164QF-BPE60CV | 42,000 | 12 | 索取报价 |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| HY5PS1G1631CFP-Y5I | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| HY5PS1G1631CLFP-Y5I-C | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16640A-3DBLA1 | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16640A-3DBLI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16640B-3DBI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16640B-3DBI-TR | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16640B-3DBLA1 | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16640B-3DBLI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16640BL-3DBLI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16640C-3DBI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |