K4T1G164QJ-BCE6
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T1G164QJ-BCE6 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 64MX16 DDR2 |
| Andere Bezeichnungen | K4T1G164QJ-BCE6000 |
| K4T1G164QJ-BCE6T00 | |
| K4T1G164QJ-BCE6TCV |
Produktbeschreibung
| Gehäuse | FBGA-84 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 667 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 64M |
| Bit Organization | x16 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Generation | 11th Generation |
| Power | Normal Power |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4T1G164QJ-BCE6 | 0 | Anfrage senden | |
| K4T1G164QJ-BCE6TCV | 2.000 | Anfrage senden | |
| K4T1G164QJ-BCE6 | 2.000 | 19+ | Anfrage senden |
| K4T1G164QJ-BCE6TCV | 22.000 | 18+ | Anfrage senden |
| K4T1G164QJ-BCE6TCV | 10.000 | 18+ | Anfrage senden |
| K4T1G164QJ-BCE6 | 4.000 | 100% NEW | Anfrage senden |
| K4T1G164QJ-BCE6 | 10.000 | Anfrage senden | |
| K4T1G164QJ-BCE6TCV | 4.000 | Anfrage senden | |
| K4T1G164QJ-BCE6TCV | 28.000 | Anfrage senden | |
| K4T1G164QJ-BCE6 | 38.000 | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| K4T1G164QE-HCE6000 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G164QE-HCE60JR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G164QE-HCE6: | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G164QE-HCE6T | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G164QE-HCE6T00 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G164QE-HCE6T000 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G164QE-HCE7/E6 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G164QE-HELE6 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G164QE-HIE6 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G164QE-HIE6000 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |