K4T1G164QQ-HCE6

Produktübersicht

IC Picture

Bilder dienen nur der Illustration

Hersteller-Nummer K4T1G164QQ-HCE6
Hersteller SAMSUNG
Produktkategorie DDR2 SDRAM
IC-Code 64MX16 DDR2
Andere Bezeichnungen K4T1G164QQ-HCE60
K4T1G164QQ-HCE600
K4T1G164QQ-HCE6000
K4T1G164QQ-HCE60JR
K4T1G164QQ-HCE6T
K4T1G164QQ-HCE6T00
K4T1G164QQ-HCE6T000

Produktbeschreibung

Gehäuse FBGA-84
Verpackung TRAY
RoHS RoHS
Spannungsversorgung 1.8 V
Betriebstemperatur 0 C~+85 C
Geschwindigkeit 667 MBPS
Standard Stückzahl 1280
Abmessungen Karton
Number Of Words 64M
Bit Organization x16
Density 1G
Internal Banks 8 Banks
Generation 17th Generation
Power Normal Power

Verfügbare Angebote

Teilenummer Menge Datecode
K4T1G164QQ-HCE6 446 10+ Anfrage senden
K4T1G164QQ-HCE6 4.000 Anfrage senden
K4T1G164QQ-HCE6 1.016 08+ Anfrage senden
K4T1G164QQ-HCE6 7.840 0922+10+ Anfrage senden
K4T1G164QQ-HCE6 966 10+ Anfrage senden
K4T1G164QQ-HCE6 8 Anfrage senden
K4T1G164QQ-HCE6 248 Anfrage senden
K4T1G164QQ-HCE6 12.500 Anfrage senden
K4T1G164QQ-HCE6 11.350 16+ Anfrage senden
K4T1G164QQ-HCE6 8.960 2010+ Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
HYB18TC1G160CF-3S FBGA-84 1.8 V 667 MBPS 0 C~+85 C
IS43DR16640A-3DBL FBGA-84 1.8 V 667 MBPS 0 C~+85 C
IS43DR16640B-3D FBGA-84 1.8 V 667 MBPS 0 C~+85 C
IS43DR16640B-3DB FBGA-84 1.8 V 667 MBPS 0 C~+85 C
IS43DR16640B-3DBL FBGA-84 1.8 V 667 MBPS 0 C~+85 C
IS43DR16640B-3DBLT FBGA-84 1.8 V 667 MBPS 0 C~+85 C
IS43DR16640BL-3DBL FBGA-84 1.8 V 667 MBPS 0 C~+85 C
IS43DR16640C-3DB FBGA-84 1.8 V 667 MBPS 0 C~+85 C
IS43DR16640C-3DBL FBGA-84 1.8 V 667 MBPS 0 C~+85 C
K4T1G1640AZCE6 FBGA-84 1.8 V 667 MBPS 0 C~+85 C