Bilder dienen nur der Illustration
Hersteller-Nummer | K4T51163QG-HCE6 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 32MX16 DDR2 |
Andere Bezeichnungen | K4T51163QG-HCE60 |
K4T51163QG-HCE600 | |
K4T51163QG-HCE600/T00 | |
K4T51163QG-HCE6000 | |
K4T51163QG-HCE60CV | |
K4T51163QG-HCE60T00 | |
K4T51163QG-HCE6: | |
K4T51163QG-HCE6T | |
K4T51163QG-HCE6T00 | |
K4T51163QG-HCE6T000 |
Gehäuse | FBGA-84 |
Verpackung | TRAY |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 667 MBPS |
Standard Stückzahl | 1280 |
Abmessungen Karton | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 8th Generation |
Power | Normal Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T51163QG-HCE6 | 100,000+ | 2010+ | Anfrage senden |
K4T51163QG-HCE6 | 20.000 | 06+ | Anfrage senden |
K4T51163QG-HCE6 | 2.901 | 10/11+ | Anfrage senden |
K4T51163QG-HCE6 | 14.000 | 2011+ | Anfrage senden |
K4T51163QG-HCE6 | 1.280 | 2011 | Anfrage senden |
K4T51163QG-HCE6T | 10.000 | 2010 | Anfrage senden |
K4T51163QG-HCE6 | 10.240 | 11+ | Anfrage senden |
K4T51163QG-HCE6 | 50.000 | Anfrage senden | |
K4T51163QG-HCE6 | 20.704 | 11+ | Anfrage senden |
K4T51163QG-HCE6 | 2.134 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
EM68B16CWPA-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
EM68B16CWPA-3H 512MB DDR2 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
EM68B16CWQC-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621AF-Y4 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621AF-Y5 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621AFP-Y4 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621AFP-Y5 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621BEP-Y5 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621BFP-Y4 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621BFP-Y5-C | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |