Bilder dienen nur der Illustration
Hersteller-Nummer | K4T51163QG-HCE7 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 32MX16 DDR2 |
Andere Bezeichnungen | K4T51163QG-HCE7000 |
K4T51163QG-HCE70JP | |
K4T51163QG-HCE7T | |
K4T51163QG-HCE7T00 | |
K4T51163QGHCE70 |
Gehäuse | FBGA-84 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 800 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 8th Generation |
Power | Normal Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T51163QGHCE70 | 4.000 | Anfrage senden | |
K4T51163QG-HCE7 | 400 | Anfrage senden | |
K4T51163QG-HCE7 | 109 | 1016+ | Anfrage senden |
K4T51163QG-HCE7 | 129 | 09+ | Anfrage senden |
K4T51163QG-HCE7 | 978 | 09+ | Anfrage senden |
K4T51163QG-HCE7 | 174 | 1016+ | Anfrage senden |
K4T51163QG-HCE7 | 12.500 | Anfrage senden | |
K4T51163QG-HCE7 | 166 | 10+ | Anfrage senden |
K4T51163QG-HCE7 | 174 | 1016 | Anfrage senden |
K4T51163QG-HCE7 | 9.600 | 14+ | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
HY5PS121621CFPS5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HY5PS121621CLFP-E3 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HY5PS121621CLFP-S6 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HY5PS121621CLFPS5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HY5PS121621F-E3 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HY5PS121621FP-E3 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HY5PS121621LF-E3 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HY5PS121621LFP-E3 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HY5PS121621LFP-S5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HY5PS121621LFP-S6 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |