Bilder dienen nur der Illustration
Hersteller-Nummer | K4T51163QI-HCE7 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 32MX16 DDR2 |
Andere Bezeichnungen | K4T51163QI-HCE700 |
K4T51163QI-HCE7000 | |
K4T51163QI-HCE7T | |
K4T51163QI-HCE7T00 | |
K4T51163QIHCE70 |
Gehäuse | FBGA-84 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 800 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 10th Generation |
Power | Normal Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T51163QI-HCE7 | 336 | 1037+ | Anfrage senden |
K4T51163QI-HCE7 | 386 | Anfrage senden | |
K4T51163QI-HCE7 | 2.363 | 1137+ | Anfrage senden |
K4T51163QI-HCE7 | 1.849 | 1037+ | Anfrage senden |
K4T51163QI-HCE7 | 963 | 12+ | Anfrage senden |
K4T51163QI-HCE7 | 904 | 1028+ | Anfrage senden |
K4T51163QI-HCE7 | 670 | 1043+ | Anfrage senden |
K4T51163QI-HCE7 | 3.652 | Anfrage senden | |
K4T51163QI-HCE7T | 1.405 | Anfrage senden | |
K4T51163QI-HCE7 | 895 | 2014+ | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
PME809416BBR-E7DN | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
PME809416CBR-E7DN | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
PME809416DBR-E7DN | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
W9751G6IB-25 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
W9751G6JB-25 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
W9751G6JB-25 DDR2 512M | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
W9751G6JB-25 T R | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
W9751G6JB-25: | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
W9751G6JB-25DDR232X16 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
W9751G6JB25A | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |