Bilder dienen nur der Illustration
Hersteller-Nummer | K4T51163QN-BIE6 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 32MX16 DDR2 |
Gehäuse | FBGA-84 |
Verpackung | TRAY |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | -40 C~+85 C |
Geschwindigkeit | 667 MBPS |
Standard Stückzahl | 1280 |
Abmessungen Karton | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 14th Generation |
Power | Normal Power |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
MT47H32M16HW-3IT:F | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
MT47H32M16HW-3ITF | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
MT47H32M16HW-3ITFTR | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
MT47H32M16HW-3ITG | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
MT47H32M16HW25EITG | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
MT47H32M16LFBF-6 IT:C | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
MT47H32M16NF-25 IT:H | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
MT47H32M16NF-25E AIT | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
MT47H32M16NF-25E AIT:H | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
MT47H32M16NF-25E AIT:H P1580 | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |