K4T51163QN-BIE6

产品概述

IC Picture

图片仅供参考

制造商IC编号 K4T51163QN-BIE6
厂牌 SAMSUNG/三星
IC 类别 DDR2 SDRAM
IC代码 32MX16 DDR2

产品详情

脚位/封装 FBGA-84
外包装 TRAY
无铅/环保 无铅/环保
电压(伏) 1.8 V
温度规格 -40 C~+85 C
速度 667 MBPS
标准包装数量 1280
标准外箱
Number Of Words 32M
Bit Organization x16
Density 512M
Internal Banks 4 Banks
Generation 14th Generation
Power Normal Power

FFFE/互通料号 (形式,腳位和功能对等)

IC 编号 脚位/封装 电压(伏) 速度 温度规格
MT47H32M16HW-3IT:F FBGA-84 1.8 V 667 MBPS -40 C~+85 C
MT47H32M16HW-3ITF FBGA-84 1.8 V 667 MBPS -40 C~+85 C
MT47H32M16HW-3ITFTR FBGA-84 1.8 V 667 MBPS -40 C~+85 C
MT47H32M16HW-3ITG FBGA-84 1.8 V 667 MBPS -40 C~+85 C
MT47H32M16HW25EITG FBGA-84 1.8 V 667 MBPS -40 C~+85 C
MT47H32M16LFBF-6 IT:C FBGA-84 1.8 V 667 MBPS -40 C~+85 C
MT47H32M16NF-25 IT:H FBGA-84 1.8 V 667 MBPS -40 C~+85 C
MT47H32M16NF-25E AIT FBGA-84 1.8 V 667 MBPS -40 C~+85 C
MT47H32M16NF-25E AIT:H FBGA-84 1.8 V 667 MBPS -40 C~+85 C
MT47H32M16NF-25E AIT:H P1580 FBGA-84 1.8 V 667 MBPS -40 C~+85 C