K4T51163QN-BIE6
产品概述
图片仅供参考
| 制造商IC编号 | K4T51163QN-BIE6 |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR2 SDRAM |
| IC代码 | 32MX16 DDR2 |
产品详情
| 脚位/封装 | FBGA-84 |
| 外包装 | TRAY |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.8 V |
| 温度规格 | -40 C~+85 C |
| 速度 | 667 MBPS |
| 标准包装数量 | 1280 |
| 标准外箱 | |
| Number Of Words | 32M |
| Bit Organization | x16 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Generation | 14th Generation |
| Power | Normal Power |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| EM68B16CWQD-3IH | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| HY5PS121621CFP-Y4I | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| HY5PS121621CFP-Y5I | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| HY5PS121621CLFP-Y4I | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| HY5PS121621CLFP-Y5I | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16320-3DBLI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16320B-3DBI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16320B-3DBI-TR | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16320B-3DBLI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16320C-3DBI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |