圖片僅供參考
製造商IC編號 | K4T51163QN-BIE6 |
廠牌 | SAMSUNG/三星 |
IC 類別 | DDR2 SDRAM |
IC代碼 | 32MX16 DDR2 |
脚位/封装 | FBGA-84 |
外包裝 | TRAY |
無鉛/環保 | 無鉛/環保 |
電壓(伏) | 1.8 V |
溫度規格 | -40 C~+85 C |
速度 | 667 MBPS |
標準包裝數量 | 1280 |
標準外箱 | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 14th Generation |
Power | Normal Power |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
EM68B16CWQD-3IH | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
HY5PS121621CFP-Y4I | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
HY5PS121621CFP-Y5I | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
HY5PS121621CLFP-Y4I | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
HY5PS121621CLFP-Y5I | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
K4T51163QI-HIE60CV | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
K4T51163QJ-BIE6TCV | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
K4T51163QQ-BIE6 | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
K4T51163QQ-BIE6000 | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
K4T51163QQ-BIE6TCV | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |