K4T51163QN-BIE7

Produktübersicht

IC Picture

Bilder dienen nur der Illustration

Hersteller-Nummer K4T51163QN-BIE7
Hersteller SAMSUNG
Produktkategorie DDR2 SDRAM
IC-Code 32MX16 DDR2
Andere Bezeichnungen K4T51163QN-BIE70
K4T51163QN-BIE700
K4T51163QN-BIE7000
K4T51163QN-BIE70CV
K4T51163QN-BIE7T00
K4T51163QN-BIE7TCV

Produktbeschreibung

Gehäuse FBGA-84
Verpackung
RoHS RoHS
Spannungsversorgung 1.8 V
Betriebstemperatur -40 C~+85 C
Geschwindigkeit 800 MBPS
Standard Stückzahl
Abmessungen Karton
Number Of Words 32M
Bit Organization x16
Density 512M
Internal Banks 4 Banks
Generation 14th Generation
Power Normal Power

Verfügbare Angebote

Teilenummer Menge Datecode
K4T51163QN-BIE7 2.000 21+ Anfrage senden
K4T51163QN-BIE7 3.000 Anfrage senden
K4T51163QN-BIE700 2.997 Anfrage senden
K4T51163QN-BIE7 4.000 Anfrage senden
K4T51163QN-BIE7TCV 2.000 Anfrage senden
K4T51163QN-BIE70CV 36.638 Anfrage senden
K4T51163QN-BIE7000 12.736 Anfrage senden
K4T51163QN-BIE7 105 1637+ Anfrage senden
K4T51163QN-BIE7TCV 2.000 20 Anfrage senden
K4T51163QN-BIE7TCV 0 Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
EM68B16CWQD-25IH FBGA-84 1.8 V 800 MBPS -40 C~+85 C
EM68B16CWQH-25IH FBGA-84 1.8 V 800 MBPS -40 C~+85 C
EM68B16CWQK-25IH FBGA-84 1.8 V 800 MBPS -40 C~+85 C
H5PS5162FFR-Y5I OR H5PS5162GFR FBGA-84 1.8 V 800 MBPS -40 C~+85 C
HXI18T512160BF(L)-25E TFBGA-84 1.8V 800 MBPS -40 C~+85 C
HY5PS121621CFP-E3I FBGA-84 1.8 V 800 MBPS -40 C~+85 C
HY5PS121621CFP-S5I FBGA-84 1.8 V 800 MBPS -40 C~+85 C
HY5PS121621CFP-S6I FBGA-84 1.8 V 800 MBPS -40 C~+85 C
HY5PS121621CLFP-E3I FBGA-84 1.8 V 800 MBPS -40 C~+85 C
HY5PS121621CLFP-S5I FBGA-84 1.8 V 800 MBPS -40 C~+85 C