Bilder dienen nur der Illustration
Hersteller-Nummer | K4T51163QN-BIE7 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 32MX16 DDR2 |
Andere Bezeichnungen | K4T51163QN-BIE70 |
K4T51163QN-BIE700 | |
K4T51163QN-BIE7000 | |
K4T51163QN-BIE70CV | |
K4T51163QN-BIE7T00 | |
K4T51163QN-BIE7TCV |
Gehäuse | FBGA-84 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | -40 C~+85 C |
Geschwindigkeit | 800 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 14th Generation |
Power | Normal Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T51163QN-BIE7 | 2.000 | 21+ | Anfrage senden |
K4T51163QN-BIE7 | 3.000 | Anfrage senden | |
K4T51163QN-BIE700 | 2.997 | Anfrage senden | |
K4T51163QN-BIE7 | 4.000 | Anfrage senden | |
K4T51163QN-BIE7TCV | 2.000 | Anfrage senden | |
K4T51163QN-BIE70CV | 36.638 | Anfrage senden | |
K4T51163QN-BIE7000 | 12.736 | Anfrage senden | |
K4T51163QN-BIE7 | 105 | 1637+ | Anfrage senden |
K4T51163QN-BIE7TCV | 2.000 | 20 | Anfrage senden |
K4T51163QN-BIE7TCV | 0 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
EM68B16CWQD-25IH | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
EM68B16CWQH-25IH | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
EM68B16CWQK-25IH | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
H5PS5162FFR-Y5I OR H5PS5162GFR | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
HXI18T512160BF(L)-25E | TFBGA-84 | 1.8V | 800 MBPS | -40 C~+85 C |
HY5PS121621CFP-E3I | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
HY5PS121621CFP-S5I | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
HY5PS121621CFP-S6I | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
HY5PS121621CLFP-E3I | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
HY5PS121621CLFP-S5I | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |