K4T51163QN-BIE7

Produktübersicht

IC Picture

Bilder dienen nur der Illustration

Hersteller-Nummer K4T51163QN-BIE7
Hersteller SAMSUNG
Produktkategorie DDR2 SDRAM
IC-Code 32MX16 DDR2
Andere Bezeichnungen K4T51163QN-BIE70
K4T51163QN-BIE700
K4T51163QN-BIE7000
K4T51163QN-BIE70CV
K4T51163QN-BIE7T00
K4T51163QN-BIE7TCV

Produktbeschreibung

Gehäuse FBGA-84
Verpackung
RoHS RoHS
Spannungsversorgung 1.8 V
Betriebstemperatur -40 C~+85 C
Geschwindigkeit 800 MBPS
Standard Stückzahl
Abmessungen Karton
Number Of Words 32M
Bit Organization x16
Density 512M
Internal Banks 4 Banks
Generation 14th Generation
Power Normal Power

Verfügbare Angebote

Teilenummer Menge Datecode
K4T51163QN-BIE7 2.000 21+ Anfrage senden
K4T51163QN-BIE7 3.000 Anfrage senden
K4T51163QN-BIE700 2.997 Anfrage senden
K4T51163QN-BIE7 4.000 Anfrage senden
K4T51163QN-BIE7TCV 2.000 Anfrage senden
K4T51163QN-BIE70CV 36.638 Anfrage senden
K4T51163QN-BIE7000 12.736 Anfrage senden
K4T51163QN-BIE7 105 1637+ Anfrage senden
K4T51163QN-BIE7TCV 2.000 20 Anfrage senden
K4T51163QN-BIE7TCV 0 Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
IS43DR16320C-25DBLI FBGA-84 1.8 V 800 MBPS -40 C~+85 C
IS43DR16320D -25DBLA1 FBGA-84 1.8 V 800 MBPS -40 C~+85 C
IS43DR16320D-25DBI FBGA-84 1.8 V 800 MBPS -40 C~+85 C
IS43DR16320D-25DBI-TR FBGA-84 1.8 V 800 MBPS -40 C~+85 C
IS43DR16320D-25DBLI FBGA-84 1.8 V 800 MBPS -40 C~+85 C
IS43DR16320E -25DBLA1 FBGA-84 1.8 V 800 MBPS -40 C~+85 C
IS43DR16320E-25DBI FBGA-84 1.8 V 800 MBPS -40 C~+85 C
IS43DR16320E-25DBI-TR FBGA-84 1.8 V 800 MBPS -40 C~+85 C
IS43DR16320E-25DBLI FBGA-84 1.8 V 800 MBPS -40 C~+85 C
IS46DR16320B-25EBLA1 FBGA-84 1.8 V 800 MBPS -40 C~+85 C